Method of using silicon oxynitride to improve fabricating of DRA

Details Method of using silicon oxynitride to improve fabricating of DRA Method of using silicon oxynitride to improve fabricating of DRA

1999-04-07

2000-02-08

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438381, 438393, 438396, 438257, 257296, 257300, 257306, 257379, H01L 218242

Patent

active

060227761

ABSTRACT:
A method for forming a DRAM cell of a DRAM circuit is disclosed. The DRAM circuit includes a periphery region and a cell region. The DRAM cell is in the cell region and comprises an access transistor and a capacitor. The access transistor has a gate, a source, and a drain. The periphery region includes a plurality of gates. The method comprises the deposition of a silicon oxynitride layer over the gates, the silicon oxynitride layer acting as a bottom anti-reflection coating. That portion of the silicon oxynitride layer that lies over the DRAM cell is removed. A landing pad is formed over the source of the access transistor and a bitline pad is formed over the drain of the transistor. Next, a first oxide layer is formed over the landing pad and the bitline pad. A capacitor is formed over the landing pad and a second oxide layer is formed over the capacitor. Finally, metal contacts are formed to at least one of the gates in the periphery region using the silicon oxynitride layer as a buffer layer to prevent substrate loss or overetching.

REFERENCES:
patent: 5716881 (1998-02-01), Liang et al.
patent: 5792687 (1998-08-01), Jeng et al.
patent: 5895239 (1999-04-01), Jeng et al.
patent: 5930627 (1999-07-01), Zhou et al.

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