Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-04-19
2005-04-19
Pert, Evan (Department: 2829)
Semiconductor device manufacturing: process
With measuring or testing
C438S468000
Reexamination Certificate
active
06881594
ABSTRACT:
The present invention is generally directed to various methods of using scatterometry for analysis of electromigration. In one illustrative embodiment, the method comprises forming a grating structure above a semiconducting substrate, the grating structure being comprised of a plurality of conductive structures, forcing an electrical current through at least one of the conductive structures and performing scatterometric measurements of at least one conductive structure to detect a change in shape of at least a portion of the conductive structure. In further embodiments, the method comprises determining a susceptibility of at least one conductive structure to electromigration based upon the detected change in shape of the conductive structure.
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Lensing Kevin R.
Nariman Homi E.
Reeves Steven P.
Stirton James Broc
Advanced Micro Devices , Inc.
Pert Evan
Williams Morgan & Amerson P.C.
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