Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1984-11-29
1986-05-06
Brammer, Jack P.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430269, 430270, 430322, 430329, 430330, 430323, 430311, 528 25, 528 30, 528 33, 556430, G03C 500
Patent
active
045872058
ABSTRACT:
New polysilane copolymers comprise recurring units of --Si(X)(Y)-- and Si(A)(B)--, Si(X)(Y) being different from Si(A)(B), wherein
REFERENCES:
patent: 2554976 (1951-05-01), Burkhard
patent: 2606879 (1952-08-01), Clark
patent: 2612511 (1952-09-01), Orkin
patent: 3890149 (1975-06-01), Schlesinger et al.
patent: 3907564 (1975-09-01), Boardman et al.
patent: 4052430 (1977-10-01), Yajima et al.
patent: 4276424 (1981-06-01), Peterson et al.
patent: 4324901 (1982-04-01), West et al.
patent: 4377677 (1983-03-01), Iwai et al.
patent: 4396702 (1983-08-01), Desai et al.
patent: 4464460 (1984-08-01), Hiraoka et al.
Hofer et al., IBM Technical Disclosure Bulletin, vol. 26, No. 10B, Mar., 1984.
West et al., JACS, 103, pp. 7352-7354 (1981).
Ishikawa et al., J. Organometal. Chem. 42, 333-338, (1972).
Wesson et al., J. Poly. Sci., Chem. Ed., 17, 2833-2843, (1979).
Wesson et al., J. Poly. Sci., Chem. Ed., 18, 959-965 (1980).
Wesson et al., J. Poly. Sci., Chem., Ed., 19, 65-72 (1981).
Trefonas et al., J. Poly. Sci., Polymer Letters Ed. 21, 819-822 (1983).
Trefonas et al., J. Poly. Sci., Polymer Letters Ed. 21, 823-829 (1983).
Xing-Hua Zhang et al., J. Poly. Sci., Poly. Chem. Ed. 22, 159-170 and 225-238 (1984).
Harrah Larry A.
Zeigler John M.
Brammer Jack P.
Hightower Judson R.
McMillan Armand
Sopp Albert
The United States of America as represented by the United States
LandOfFree
Method of using polysilane positive photoresist materials does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of using polysilane positive photoresist materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of using polysilane positive photoresist materials will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1574492