Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1998-03-31
2000-09-05
Dang, Trung
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
438761, 438947, 438950, 438952, 438439, H01L 2131
Patent
active
061142557
ABSTRACT:
A germanium and silicon alloy is employed as an antireflective coating material for use in active area lithography and gate area lithography steps in the formation of a semiconductor integrated circuit. A layer composed of an alloy of germanium-silicon is deposited over an active area nitride layer or over a gate area nitride layer, and a photoresist layer is then formed on the germanium-silicon alloy layer. The photoresist layer is than exposed and developed. During exposure, the germanium-silicon alloy layer substantially reduces reflection from the underlying nitride layer, thereby relieving the dependency of exposure energy and resulting line width on the underlying nitride layer thickness.
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Dang Trung
Micro)n Technology, Inc.
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