Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-15
2005-02-15
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S703000
Reexamination Certificate
active
06855627
ABSTRACT:
An exemplary embodiment relates to a method of using an amorphous carbon layer to prevent photoresist poisoning. The method includes doping a first amorphous carbon layer located above a substrate, providing an oxide layer above the first amorphous carbon layer where the oxide layer has a pinhole, and providing a second amorphous carbon layer adjacent to the oxide layer. The second amorphous carbon layer is undoped and the second amorphous carbon layer helps prevent photoresist poisoning.
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Bell Scott A.
Dakshina-Murthy Srikanteswara
Huang Richard J.
Nguyen Richard C.
Tabery Cyrus E.
Advanced Micro Devices , Inc.
Coleman W. David
Foley & Lardner LLP
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