Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1977-12-30
1980-07-08
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430 5, 430142, 430192, 430296, G03C 516
Patent
active
042118344
ABSTRACT:
A photolithographic method wherein a mask is made by pattern exposing and developing a o-quinone diazide sensitized phenol-formaldehyde resist layer, the formed resist mask then being used directly as an exposure mask for a layer of deep ultraviolet (less than 3000A) sensitive resist such as an alkyl methacrylate resist.
Since alkyl methacrylate resists are not sensitive to light above 3000A and phenol-formaldehyde resists are opaque to light below 3000A, phenol-formaldehyde resists may be used directly as photoexposure masks for alkyl methacrylate resists using any broad band exposure light source which includes deep ultraviolet. The direct use of a phenol-formaldehyde resist layer as an exposure mask for an alkyl methacrylate resist layer allows more flexible and practical use of resist exposure techniques, including fabrication of an etch resistant mask of high aspect ratio and high resolution without fabrication of an intermediate metallic mask from a material such as chromium.
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Lin, B. J., "Deep UV Lithography," J. Vac. Sci. Tech., vol. 12, No. 6, pp. 1317-1320, (1975).
Dr. W. Summer, "Ultra-Violet and Infra-Red Engineering," Sir Isaac Pitman & Sons Ltd., 1962, pp. 61 and 287.
Lapadula Constantino
Lin Burn J.
Bowers Jr. Charles L.
Drumheller Ronald L.
International Business Machines - Corporation
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