Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-10-25
1999-01-19
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438263, H01L 218247
Patent
active
058613331
ABSTRACT:
The present invention includes forming a first field oxide region (FOX) on a substrate. Buried N.sup.+ regions are then formed. Subsequently, a plurality of second FOX regions are formed. A tunneling window region between the second FOX regions is narrowed by the formation of the second FOX regions. Then a tunnel oxide is formed on the substrate. A first polysilicon layer is deposited on the first FOX, the second FOXs, the gate oxide, the tunnel oxide and the substrate. An etching step is used to define the floating gate. A dielectric layer is formed on the floating gate. A second polysilicon layer is then formed on the dielectric layer. The second polysilicon layer and the dielectric layer are etched. An ion implantation step is used to form source and drain of the gate.
REFERENCES:
patent: 5032533 (1991-07-01), Gill et al.
patent: 5173436 (1992-12-01), Gill et al.
patent: 5411908 (1995-05-01), Santin et al.
patent: 5597750 (1997-01-01), Pio et al.
Chaudhari Chandra
United Microelectonics Corp.
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