Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-26
2006-12-26
Malsawma, Lex H. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S795000
Reexamination Certificate
active
07153749
ABSTRACT:
A method of tuning threshold voltages of interdiffusible structures. The method includes a step of situating a interdiffusible structure in a path of a laser and a step of illuminating the interdiffusible structure with laser energy until a desired threshold voltage is obtained.
REFERENCES:
patent: 6156654 (2000-12-01), Ho et al.
patent: 6984551 (2006-01-01), Yamazaki et al.
patent: 2002/0106858 (2002-08-01), Zheng et al.
patent: 2005/0145893 (2005-07-01), Doczy et al.
Lu Ryan P.
Offord Bruce W.
Ramirez Ayax D.
Russell Stephen D.
Kagan Michael A.
Lee Allan Y.
Lipovsky Peter A.
Malsawma Lex H.
The United States of America as represented by the Secretary of
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