Method of trench isolation and method for manufacturing a...

Details Method of trench isolation and method for manufacturing a... Method of trench isolation and method for manufacturing a...

2006-09-05

2006-09-05

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S723000

Reexamination Certificate

active

07101803

ABSTRACT:
In accordance with a method of trench isolation, a first oxide layer is formed on a semiconductor substrate. A first conductive layer and a nitride layer are successively formed on the first oxide layer. The nitride layer, the first conductive layer and the first oxide layer are etched to form a nitride layer pattern, a first conductive layer pattern and an oxide layer pattern. A portion of the substrate adjacent to the first conductive layer pattern is etched to form a trench in the substrate. The trench is cured under dinitrogen monoxide (N2O) or nitrogen monoxide(NO) atmosphere. A second oxide layer is formed in the trench through an in-situ process.

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patent: 2003-0021011 (2003-03-01), None

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