Method of treating inlaid copper for improved capping layer...

Details Method of treating inlaid copper for improved capping layer... Method of treating inlaid copper for improved capping layer...

2005-04-05

2005-04-05

Tran, Michael (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S624000, C438S631000, C438S637000, C438S645000

Reexamination Certificate

active

06875694

ABSTRACT:
An exposed surface of inlaid Cu is plasma treated for improved capping layer adhesion while controlling plasma conditions to avoid damaging porous low-k materials. Embodiments include forming a dual damascene opening in a porous dielectric material having a dielectric constant (k) of up to 2.4, e.g., 2.0 to 2.2, filling the opening with Cu, conducting CMP, plasma treating the exposed Cu surface in NH3or H2at a low power, e.g., 75 to 125 watts, for a short period of time, e.g., 2 to 8 seconds, without etching the porous low-k material and depositing a capping layer, e.g., silicon nitride or silicon carbide.

REFERENCES:
patent: 6165894 (2000-12-01), Pramanick et al.
patent: 6638875 (2003-10-01), Han et al.
patent: 6686273 (2004-02-01), Hsu et al.
patent: 6737747 (2004-05-01), Barth et al.
patent: 6790770 (2004-09-01), Chen et al.

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