Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2011-07-26
2011-07-26
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S964000, C257SE21228
Reexamination Certificate
active
07985683
ABSTRACT:
A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
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Iimori Hiroyasu
Ji Linan
Koide Tatsuhiko
Okuchi Hisashi
Shimayama Kentaro
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Fourson George
Kabushiki Kaisha Toshiba
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