Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate
Reexamination Certificate
2005-08-23
2005-08-23
Padgett, Marianne (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of substrate or post-treatment of coated substrate
C427S255270, C427S255391, C427S255394, C438S785000, C438S786000
Reexamination Certificate
active
06933021
ABSTRACT:
A method of forming a titanium silicide nitride (TiSiN) layer on a substrate id described. The titanium silicide nitride (TiSiN) layer is formed by providing a substrate to a process chamber and treating the substrate with a silicon-containing gas. A titanium nitride layer is formed on the treated substrate and exposed to a silicon-containing gas. The titanium nitride (TiN) layer reacts with the silicon-containing gas to form the titanium silicide nitride (TiSiN) layer. The formation of the titanium silicide nitride (TiSiN) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the titanium silicide nitride (TiSiN) layer may be used as a diffusion barrier for a tungsten (W) metallization process.
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Chang Mei
Chou Jing-Pei
Kao Chien-Teh
Lai Chiukin
Mosely Roderick C.
Applied Materials Inc.
Moser Patterson & Sheridan LLP
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