Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate
2006-07-25
2009-08-04
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
C438S514000, C438S517000
Reexamination Certificate
active
07569463
ABSTRACT:
The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
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Balakrishna Ajit
Carey Paul
Jennings Dean
Mayur Abhilash
Moffatt Stephen
Applied Materials Inc.
Dang Phuc T
Patterson & Sheridan LLP
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