Method of testing for SRAM pull-down transistor sub-threshold le

Details Method of testing for SRAM pull-down transistor sub-threshold le Method of testing for SRAM pull-down transistor sub-threshold le

1998-03-26

1999-08-10

Le, Vu A.

Static information storage and retrieval

Read/write circuit

Testing

365154, G11C 700

Patent

active

059369027

ABSTRACT:
A method of testing for SRAM pull-down transistor sub-threshold leakage is disclosed. The method according to the present invention can detect the problem of changes in store state resulting form sub-threshold leakage current flow through the parasitic resistor in SRAM, and therefore provides an advantageous way for the manufacturer to eliminate the defective products and thereby improve the reliability of SRAM.

REFERENCES:
patent: 5568435 (1996-10-01), Marr

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