Method of taper-etching with photoresist adhesion layer

Details Method of taper-etching with photoresist adhesion layer Method of taper-etching with photoresist adhesion layer

1990-10-12

1991-10-15

Fisher, Richard V.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566611, 430317, H01L 21306

Patent

active

050571869

ABSTRACT:
In a two-step etching process for making tapered contact openings in a dieletric, a thin layer of a material is interposed to serve as an adhesive between the dielectric and a photoresist layer the thin layer of material is chosen to remain essentially intact during undercut partial etching of the dielectric. As a result of enhanced adhesion, the photoresist layer remains more accurately positioned for subsequent anisotropic etching across the remainder of the thickness of the dielectric.

REFERENCES:
patent: 4272561 (1981-06-01), Rothman et al.
patent: 4484978 (1984-11-01), Keyser
patent: 4705596 (1987-11-01), Gimpelson et al.
patent: 4793896 (1988-12-01), Douglas
patent: 4807016 (1989-02-01), Douglas
patent: 4849376 (1989-07-01), Balzan et al.
SPIE, vol. 772 (1987), "Tapered Wet Etching of Contacts Using a Trilayer Silox Structure," M. P. Karnett, pp. 166-171.

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