Method of surface treatment of semiconductor substrates

Details Method of surface treatment of semiconductor substrates Method of surface treatment of semiconductor substrates

1997-08-01

2000-04-18

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

438694, 438714, 438718, 216 37, 216 67, H01L 2100

Patent

active

060515031

ABSTRACT:
This invention relates to methods for treatment of semiconductor substrates and in particular a method of etching a trench in a semiconductor substrate in a reactor chamber using alternatively reactive ion etching and depositing a passivation layer by chemical vapour deposition, wherein one or more of the following parameters: gas flow rates, chamber pressure, plasma power, substrate bias, etch rate, deposition rate, cycle time and etching/deposition ratio vary with time.

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