Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-21
2008-10-07
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S690000, C438S906000, C257SE21697
Reexamination Certificate
active
07432186
ABSTRACT:
Affords methods of surface treating a substrate and of manufacturing Group III-V compound semiconductors, in which a substrate made of a Group III-V semiconductor compound is rendered stoichiometric, and microscopic roughness on the surface following epitaxial growth is reduced. The methods include preparing a substrate made of a Group III-V semiconductor compound (S10), and cleaning the substrate with a cleaning solution whose pH has been adjusted to an acidity of 2 to 6.3 inclusive, and to which an oxidizing agent has been added (S20).
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Nishiura Takayuki
Uemura Tomoki
Geyer Scott B.
Judge James W.
Lee Cheung
Sumitomo Electric Industries Ltd
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