Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-24
2010-06-29
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S535000, C257SE21141, C257SE21413
Reexamination Certificate
active
07745297
ABSTRACT:
The substrate with electrodes is formed of a transparent material onto which is deposited a film (1) of a transparent conductive material of thickness e1and of refractive index n1, said film being structured to form a set of electrodes (1a) whose contours (8) delimit insulating spaces (3), wherein the insulating spaces (3) are filled with a transparent dielectric material of thickness e2and of refractive index n2so that the respective thicknesses of the conductive material and the dielectric material are inversely proportional to the values of the refractive indices of said materials and said dielectric material forms neither depressions nor beads at the contour (8) of the electrodes. A hardcoating layer (7) may be disposed between the substrate (5) and the electrodes and a protective film (9) added.The substrate with electrodes is obtained by UV irradiation through a single mask.
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Baroni Pierre-Yves
Grupp Joachim
Hoffmann Patrik
Poli Gian-Carlo
Wagner Estelle
Asulab S.A.
Chiu Tsz K
Griffin & Szipl, P.C.
Smith Zandra
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