Method of stress-testing an isolation gate in a dynamic...

Details Method of stress-testing an isolation gate in a dynamic... Method of stress-testing an isolation gate in a dynamic...

2006-02-14

2006-02-14

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Testing

C365S149000, C365S051000

Reexamination Certificate

active

06999362

ABSTRACT:
The present invention includes a DRAM array. The DRAM array includes a first memory cell, a second memory cell and an isolation gate formed between the first and second memory cells. The isolation gate is configured to provide electrical isolation between the first and second memory cells. The DRAM also includes a first switch having first and second load electrodes and a control electrode configured to accept a first control signal. The first load electrode is coupled to the isolation gate and the second load electrode is coupled to ground. The DRAM additionally includes a second switch having first and second load electrodes and a control electrode configured to accept a second control signal. The first load electrode is coupled to the isolation gate and the second load electrode is coupled to a stress voltage source.

REFERENCES:
patent: 5303193 (1994-04-01), Ogihara
patent: 5500815 (1996-03-01), Takase et al.
patent: 5638318 (1997-06-01), Seyyedy
patent: 5666323 (1997-09-01), Zagar
patent: 5677865 (1997-10-01), Seyyedy
patent: 5680344 (1997-10-01), Seyyedy
patent: 5700733 (1997-12-01), Manning
patent: 5754075 (1998-05-01), Oh et al.
patent: 6011726 (2000-01-01), Batson et al.
patent: 6118713 (2000-09-01), Raad
patent: 6169696 (2001-01-01), Bissey
patent: 6192495 (2001-02-01), Totorica et al.
patent: 6202179 (2001-03-01), Morzano
patent: 6212114 (2001-04-01), Cowles
patent: 6233185 (2001-05-01), Beffa et al.
patent: 6590817 (2003-07-01), Siek

Affiliated with

Also associated with

Rating

Method of stress-testing an isolation gate in a dynamic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of stress-testing an isolation gate in a dynamic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of stress-testing an isolation gate in a dynamic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3702902