Method of stabilizing resist material through ion implantation

Details Method of stabilizing resist material through ion implantation Method of stabilizing resist material through ion implantation

2005-03-08

2005-03-08

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S369000, C438S373000, C438S506000, C438S546000

Reexamination Certificate

active

06864144

ABSTRACT:
A resist material used to mask an underlying layer during an etch process is subjected to ion implantation to harden the resist material against damage from the etch process. In a particular embodiment, the resist material is compatible with exposure to 193 nm radiation for patterning the resist material.

REFERENCES:
patent: 6462817 (2002-10-01), Strocchia-Rivera
patent: 20020013055 (2002-01-01), Yamaguchi et al.

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