Method of simultaneously making a pair of transistors with...

Details Method of simultaneously making a pair of transistors with... Method of simultaneously making a pair of transistors with...

2006-03-21

2006-03-21

Prenty, Mark V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000

Reexamination Certificate

active

07015105

ABSTRACT:
A method of simultaneously fabricating a pair of insulated gate transistors respectively having a thin oxide and a thick oxide, and an integrated circuit including a pair of transistors of this kind. Forming low-doped NLDD areas of the thin oxide second transistor includes implanting a first dopant having a first concentration and implanting a second dopant having a second concentration lower than the first concentration. Forming low-doped areas NLDD of the first, thick oxide transistor includes only said implantation of the second dopant.

REFERENCES:
patent: 6157062 (2000-12-01), Vasanth et al.
patent: 7-193200 (1995-07-01), None
English language translation of Japanese Kokai 7-193200.

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