Method of separating films from bulk substrates by plasma immers

Details Method of separating films from bulk substrates by plasma immers Method of separating films from bulk substrates by plasma immers

1997-08-20

2000-02-22

Mulpuri, Savitri

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

438977, H01L 21265, H01L 21324

Patent

active

060279885

ABSTRACT:
A technique for fabricating substrates such as a silicon-on-insulator substrate using a plasma immersion ion implantation ("PIII") system 10. The technique includes a method, which has a step of providing a substrate 2100. Ions are implanted 2109 into a surface of the substrate to a first desired depth to provide a first distribution of the ions using a plasma immersion ion implantation system 10. The implanted ions define a first thickness of material 2101 above the implant. Global energy is then increased of the substrate to initiate a cleaving action, where the cleaving action is sufficient to completely free the thickness of material from a remaining portion of the substrate. By way of the PIII system, the ions are introduced into the substrate in an efficient and cost effective manner.

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