Method of separating a structure in a semiconductor device

Details Method of separating a structure in a semiconductor device Method of separating a structure in a semiconductor device

2006-03-31

2008-09-23

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21433

Reexamination Certificate

active

07427549

ABSTRACT:
Removing a portion of a structure in a semiconductor device to separate the structure. The structure has two portions of different heights. In one example, the structure is removed by forming a spacer over the lower portion adjacent to the sidewall of the higher portion. A second material is then formed on the structure outside of the spacer. The spacer is removed and the portion under the spacer is then removed to separate the structure at that location. In one embodiment, separate channel regions are implemented in the separated structures. In other embodiments, separate gate structures are implemented in the separated structures.

REFERENCES:
patent: 6656793 (2003-12-01), Jeong et al.
patent: 6815770 (2004-11-01), Chien et al.
patent: 6921700 (2005-07-01), Orlowski et al.
patent: 2004/0206996 (2004-10-01), Lee et al.
Rajesh Rao, et al.—Multiple fin formation, Application No. 11/240,243, filed on Sep. 30, 2005.
International Search Report issued on Oct. 29, 2007 in related PCT Application.

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