Method of sensing data in semiconductor memory device

Static information storage and retrieval – Read/write circuit – Precharge

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G11C 700

Patent

active

060916532

ABSTRACT:
The present invention provides a method of sensing data in a semiconductor device. First, an equalizing instructing signal is provided to stop precharging and equalizing the bit line pair while in a reading state. Then a wordline is selected to transmit the data in a memory cell to one of the pair of bit lines for obtaining a potential difference between the bit line pair. A sensing enable signal is subsequently provided to activate the shared sense amplifier for sensing and amplifying the data. And a potential level of the selecting control signal is boosted to a boosted potential level to restore and read the data by delaying a predetermined period of time.

REFERENCES:
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patent: 5402378 (1995-03-01), Min et al.
patent: 5444662 (1995-08-01), Tanaka et al.
patent: 5872737 (1999-02-01), Tsuruda et al.
patent: 5959913 (1999-09-01), Raad
patent: 5970007 (1999-10-01), Shiratake

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