Method of selectively etching silicon dioxide with SF.sub.6 /nit

Details Method of selectively etching silicon dioxide with SF.sub.6 /nit Method of selectively etching silicon dioxide with SF.sub.6 /nit

1983-08-11

1984-08-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 204192E, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044655525

ABSTRACT:
A gaseous mixture of SF.sub.6 and a nitriding component such as NH.sub.3 is disclosed as an effective selective SiO.sub.2 etchant for use in either the plasma or reactive ion etch process. By adding NH.sub.3 to the SF.sub.6, which is a known effective plasma etchant for silicon or poly-silicon, the silicon etch rate decreases while the oxide rate is effectively constant. At about 14% nitriding gas component, the rates are equivalent and for higher nitriding gas fractions, the silicon dioxide rate dominates. The optional addition of an inert diluent gas did not substantially change these results. The addition of hydrogen to the gaseous SF.sub.6
itriding component mixture retards the etch rate on silicon still further and may increase the selectivity.

REFERENCES:
patent: 4330384 (1982-05-01), Okudaira et al.

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