Method of selective texfturing for patterned polysilicon electro

Details Method of selective texfturing for patterned polysilicon electro Method of selective texfturing for patterned polysilicon electro

1995-12-28

1998-11-03

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, 438254, 438397, H01L 218242

Patent

active

058307931

ABSTRACT:
Polysilicon or amorphous silicon electrodes are selectively texturized with respect to neighboring dielectric surfaces. Selectivity of texturizing is partially accomplished by exploiting differences in seed incubation time on silicon as compared to neighboring surfaces. The texturizing process is made substantially completely selective by a texturizing post-etch, which selectively removes parasitic deposits from surfaces adjacent to the silicon electrodes. Selectively texturized electrodes represent a significant improvement in DRAM process integration.

REFERENCES:
patent: Re35420 (1997-01-01), Cathey et al.
patent: 4497683 (1985-02-01), Celler et al.
patent: 5102832 (1992-04-01), Tuttle
patent: 5112773 (1992-05-01), Tuttle
patent: 5366917 (1994-11-01), Wantanabe et al.
patent: 5658381 (1997-08-01), Thakur et al.
H. Wantanabe et al., "An Advanced Tecnique for Fabricating Hemispherical-Grained (HSF) Silicon Storage Devices", IEEE Transactions on Electron Devices, vol. 42, No. 2, Feb. 1995.
M. Sakao et al., "A Capacitor-Over-Bit-Line (COB) Cell with a Hemispherical-Grain Storage Note for 4 MB DRAMs", International Electron Devices Meeting 1990., San Francisco, CA USA, 9-12 Dec. 1990.

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