Method of scaling dielectric thickness in a semiconductor proces

Details Method of scaling dielectric thickness in a semiconductor proces Method of scaling dielectric thickness in a semiconductor proces

1997-11-26

2000-04-25

Mulpuri, Savitri

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438766, H01L 21265

Patent

active

060543744

ABSTRACT:
A semiconductor fabrication process including a method of controlling the gate dielectric film thickness without adjusting the oxidation recipe. A sacrificial dielectric layer is formed on an upper surface of a semiconductor substrate. An oxidation inhibiting species is then introduced into the semiconductor substrate. The sacrificial dielectric layer is then removed from the substrate and the substrate is immersed into an oxygen bearing ambient maintained at a recipe temperature for a recipe duration. Preferably, the recipe temperature is in the range of approximately 500 to 800.degree. C. and the recipe duration is in the range of approximately 2 to 20 minutes. The final thickness of the gate dielectric film is adjusted by altering a concentration of the oxidation inhibiting species within the semiconductor substrate. Preferably, the method of altering the concentration of the oxidation inhibiting species is accomplished by adjusting the dose of an implant used to introduced the oxidation inhibiting species into the semiconductor substrate.

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