Method of designing an assist feature

Details Method of designing an assist feature Method of designing an assist feature

Filed on

1998-08-17

Date issued

2000-12-26

Examiner

Rosasco, S.

Patent Class

Radiation imagery chemistry: process, composition, or product th

SubClass

Imaging affecting physical property of radiation sensitive...

SubSubClass

Making electrical device

Other Related Categories

G03C 500

Type

Patent

Status

active

Patent number

061656933

Description

ABSTRACT:
For a dense-line mask pattern, if the ratio of space width to line width is larger than 2.0 and the size of the line width is less than the exposure wave length, or for an iso-line mask pattern, if the size of the line width is less than the exposure wave length, assist features should be added and OAI should be used to increase the process window. For a dense-line mask pattern, if the ratio of space width to line width is smaller than 2.0, or for an iso-line mask pattern, if the size of the line width is larger than the exposure wavelength, no assist feature should be added.

REFERENCES:
patent: 5636002 (1997-06-01), Garofalo
patent: 5821014 (1998-10-01), Chen et al.
patent: 5847421 (1998-12-01), Yamaguchi

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