Method of reworking a semiconductor substrate and method of...

Details Method of reworking a semiconductor substrate and method of... Method of reworking a semiconductor substrate and method of...

2008-02-06

2010-11-02

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C430S329000, C430S331000, C438S725000, C257SE21492, C257SE21495

Reexamination Certificate

active

07825041

ABSTRACT:
A method of reworking a semiconductor substrate and a method of forming a pattern of semiconductor device using the same without damage to an organic anti-reflective coating (ARC) is provided. The method of reworking a semiconductor substrate includes forming a photoresist pattern on a substrate having the organic ARC formed thereon. An entire surface of the substrate having the photoresist pattern formed thereon may be exposed when a defect is present in the photoresist pattern. The entire-surface-exposed photoresist pattern may be removed by performing a developing process without damage to the organic ARC.

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Korean Office Action dated Feb. 26, 2008 for Korean counterpart Application No. 2007-13075.

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