Method of removing photoresist on a semiconductor wafer

Details Method of removing photoresist on a semiconductor wafer Method of removing photoresist on a semiconductor wafer

1988-10-11

1990-07-03

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156668, 437229, H01L 2124, H01L 21308

Patent

active

049388398

ABSTRACT:
After a semiconductor wafer is processed, a photoresist on the semiconductor wafer is removed by an irradiation of oxygen plasma while the wafer is cooled by a cooling device. The cooling device can be a susceptor or a stage on which the wafer is placed, and coolant flows through a pipe or duct installed thereto. Cooling of the wafer prevents the photoresist from being softened by the heat from the plasma. Thus, the inner side of the photoresist remains hard enough to support the affected surface portion of the photoresist, which is also difficult to remove, preventing the affected surface portion from sticking onto the surface of the wafer. Therefore, the affected portion can be more effectively irradiated by the plasma, and can be decomposed without leaving residue on the wafer. Reduced residue on the wafer surface contributes to improve production yield and quality of the products made from this wafer.

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Eparath, "Plasma Reactor For Dry Development of Resist", IBM TDB, vol. 24, No. 12, pp. 6268-6269, May 1982.
Journal of the Electrochemical Society, vol. 131, No. 5, May 1984, pp. 1164-1169, Manchester, N.H., US; J. J. Hannon et al.: "Oxidative Removal of Photoresist by Oxygen/Freon 116 Discharge Products".
Journal of the Electrochemical Society, vol. 114, No. 8, Aug. 1967, p. 213C, Abstract No. 180, Manchester, N.H., US; S. M. Irving: "A Dry Photoresist Removal Method".

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