Method of removing carbon contamination on semiconductor substra

Details Method of removing carbon contamination on semiconductor substra Method of removing carbon contamination on semiconductor substra

1999-02-01

2000-05-23

Fourson, George

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438774, 438906, 438974, H01L 2102

Patent

active

060665726

ABSTRACT:
A method of removing carbon contamination. On a semiconductor substrate having carbon contamination thereon, a sacrificial oxide layer is formed. During the formation of the sacrificial oxide layer, an agent is introduced to help and improve the growth of the sacrificial oxide layer, and to trap the carbon contamination. The sacrificial oxide layer is then removed, and the carbon contamination is removed with the sacrificial oxide layer.

REFERENCES:
patent: 5902412 (1999-05-01), Taylor
Sorab K. Ghandhi, "VLSI Fabrication Principles", John Wiley & Sons, p. 518, Jan. 6, 1983.

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