Method of reducing thick film stress of spin-on dielectric...

Details Method of reducing thick film stress of spin-on dielectric... Method of reducing thick film stress of spin-on dielectric...

2005-06-07

2005-06-07

Zarneke, David (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S763000, C438S778000

Reexamination Certificate

active

06903029

ABSTRACT:
The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.

REFERENCES:
patent: 5220482 (1993-06-01), Takemura et al.
patent: 5567660 (1996-10-01), Chen et al.
patent: 5616233 (1997-04-01), Jenn-Gwo et al.
patent: 5691240 (1997-11-01), Yang
patent: 6090726 (2000-07-01), Lee
patent: 6187663 (2001-02-01), Yu et al.
patent: 6294832 (2001-09-01), Yeh et al.
patent: 6461983 (2002-10-01), Davlin et al.
patent: 6492257 (2002-12-01), Shields et al.
patent: 6521524 (2003-02-01), Wang et al.

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