Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-27
2007-02-27
Pham, Thanhha (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S626000, C438S692000
Reexamination Certificate
active
10724201
ABSTRACT:
A method of reducing the pattern effect in the CMP process. The method comprises the steps of providing a semiconductor substrate having a patterned dielectric layer, a barrier layer on the patterned dielectric layer, and a conductive layer on the barrier layer; performing a first CMP process to remove part of the conductive layer before the barrier layer is polished, thereby a step height of the conductive layer is reduced; depositing a layer of material substantially the same as the conductive layer on the conductive layer; and performing a second CMP process to expose the dielectric layer. A method of eliminating the dishing phenomena after a CMP process and a CMP rework method are also provided.
REFERENCES:
patent: 6251786 (2001-06-01), Zhou et al.
patent: 6461225 (2002-10-01), Misra et al.
patent: 2004/0058620 (2004-03-01), Gotkis et al.
patent: 2004/0067640 (2004-04-01), Hsu et al.
Chen Kei-Wei
Chuang Ray
Feng Shien-Ping
Lin Shih-Chi
Liu Chi-Wen
Birch & Stewart Kolasch & Birch, LLP
Pham Thanhha
Taiwan Semiconductor Manufacturing Co. Ltd.
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