Method of reducing substrate losses in inductor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257501, 257531, 336200, 336232, 438243, 438359, H01L 2972, H01L 2176

Patent

active

059181214

ABSTRACT:
A method for making planar silicon-based inductor structure with improved Q is disclosed. This method includes the steps of: (a) providing a lightly-doped P-type substrate as a starting wafer; (b) forming a preliminary oxide layer on the lightly-doped P-type substrate; (c) forming a first oxide layer from the preliminary oxide layer enclosing a predetermined epitaxial area; (d) depositing an epitaxial layer in the epitaxial area using intrinsic doping; (e) forming a second oxide layer which covers both the epitaxial layer and the first oxide layer, and is merged with the first oxide layer to thus form a contiguous inter-connected inductor oxide layer; (f) forming a metal line according to a planar inductor pattern so as to form a silicon-based inductor structure. The epitaxial layer has a resistivity of at least 2 K ohm-cm. The planar silicon-based inductor improves the Q value by reducing or stopping current losses into the substrate.

REFERENCES:
patent: 5283462 (1994-02-01), Stengel
patent: 5767563 (1998-06-01), Imam et al.
patent: 5805043 (1998-09-01), Bahl
patent: 5844299 (1998-12-01), Merrill et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of reducing substrate losses in inductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of reducing substrate losses in inductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reducing substrate losses in inductor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1386406

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.