Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-05-17
2005-05-17
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S592000, C438S488000
Reexamination Certificate
active
06893948
ABSTRACT:
Polysilicon electrical depletion in a polysilicon gate electrode is reduced by depositing the polysilicon under controlled conditions so as to vary the crystal grain size through the thickness of the polysilicon. The resulting structure may have two or more depth-wise contiguous regions of respective crystalline grain size, and the selection of grain size is directed to maximize dopant activation in the polysilicon near the gate dielectric, and to tailor the resistance of the polysilicon above that first region and more distant from the gate dielectric. This method, and the resulting structure, are advantageously employed in forming FETs, and doped polysilicon resistors.
REFERENCES:
patent: 5164338 (1992-11-01), Graeger et al.
patent: 5242847 (1993-09-01), Ozturk et al.
patent: 5346850 (1994-09-01), Kaschmitter et al.
patent: 5441904 (1995-08-01), Kim et al.
patent: 5456763 (1995-10-01), Kaschmitter et al.
patent: 5776989 (1998-07-01), Kubota et al.
patent: 6008077 (1999-12-01), Maeda
patent: 6017810 (2000-01-01), Furukawa et al.
patent: 6150251 (2000-11-01), Yew et al.
patent: 6221744 (2001-04-01), Shih et al.
Ballantine Arne W.
Chan Kevin K.
Gilbert Jeffrey D.
Houlihan Kevin M.
Miles Glen L.
Hume Larry J.
Niebling John F.
Pompey Ron
Sabo William D.
LandOfFree
Method of reducing polysilicon depletion in a polysilicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of reducing polysilicon depletion in a polysilicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reducing polysilicon depletion in a polysilicon... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3433936