Method of reducing plasma stabilization time in a cyclic...

Details Method of reducing plasma stabilization time in a cyclic... Method of reducing plasma stabilization time in a cyclic...

2006-09-12

2011-11-08

Bryant, Kiesha (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S765000, C427S255230, C427S535000, C427S570000

Reexamination Certificate

active

08053372

ABSTRACT:
The present invention relates to an enhanced cyclic deposition process suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. The deposition enhancement is derived from ions generated in a plasma. The techniques described reduce the time required for plasma stabilization, thereby reducing deposition time and improving efficiency.

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