Method of reducing overetch during the formation of a semiconduc

Details Method of reducing overetch during the formation of a semiconduc Method of reducing overetch during the formation of a semiconduc

1996-10-09

2000-04-18

Wortman, Donna C.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438702, 438733, 438738, 438743, 438744, 437187, 437190, 437194, 437195, 437228, 437245, 437298, H01L 21311, H01L 21302

Patent

active

060515015

ABSTRACT:
A method used during the formation of a semiconductor device including a semiconductor wafer assembly comprises a first step of forming a first mask over a front of the wafer assembly such that a portion of first and second layers are uncovered by the mask. Next, the uncovered portion of the second layer is etched to form at least one sidewall in the second layer. A film is formed over the sidewall and, subsequent to forming the film, at least a portion of a third layer on a back of the wafer assembly is removed. During this removal, the sidewall is protected by the film. After removing the third layer, a second mask is formed over a portion of the first and second layers and the first layer is exposed.

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