Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2011-08-09
2011-08-09
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S790000, C257SE23119, C257SE23134
Reexamination Certificate
active
07994647
ABSTRACT:
A method of forming a semiconductor package with smooth edges, and a semiconductor package formed thereby is disclosed. In embodiments, after encapsulation, the semiconductor packages may be at least partially singulated from the panel by making one or more cuts through the panel to define one or more edges of the semiconductor package. The one or more edges may be smoothed by applying a laminate to the edges. The edges receiving the laminate may include any edge between a top and bottom surface of the package.
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Office Action dated Aug. 21, 2009, U.S. Appl. No. 11/863,809.
Response to Office Action filed Sep. 21, 2009, U.S. Appl. No. 11/863,809.
Office Action dated Jan. 6, 2010, U.S. Appl. No. 11/863,809.
Response to Office Action filed Mar. 8, 2010, U.S. Appl. No. 11/863,809.
Notice of Allowance and Fee(s) Due dated Jun. 4, 2010, U.S. Appl. No. 11/863,809.
Hoo Ong King
Takiar Hem
Ye Ning
Zhu Java
SanDisk Technologies Inc.
Vierra Magen Marcus & DeNiro LLP
Zarneke David A
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