Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-12-01
2011-11-01
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S689000, C438S725000
Reexamination Certificate
active
08048813
ABSTRACT:
A method of forming an integrated circuit structure includes providing a substrate; forming a first hard mask layer over the substrate; forming a second hard mask layer over the first hard mask layer; patterning the second hard mask layer to form a hard mask; and, after the step of patterning the second hard mask layer, baking the substrate, the first hard mask layer, and the hard mask. After the step of baking, a spacer layer is formed, which includes a first portion on a top of the hard mask, and a second portion and a third portion on opposite sidewalls of the hard mask. The method further includes removing the first portion of the spacer layer; removing the hard mask; and using the second portion and the third portion of the spacer layer as masks to pattern the first hard mask layer.
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Chen Neng-Kuo
Lai Chih-Yu
Tsai Cheng-Yuan
Wu Cheng-Ta
Henry Caleb
Pham Thanh V
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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