Method of reducing critical dimension bias during...

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S029000, C438S072000, C438S069000

Reexamination Certificate

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07737040

ABSTRACT:
An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.

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C. Gwyn et al., “Extreme Ultraviolet Scanning Lithography—Supports Extension of Moore's Law”, Future Fab International, vol. 11, pp. 1-14 (Jun. 2001).

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