Method of reducing carbon contamination of a thin dielectric fil

Details Method of reducing carbon contamination of a thin dielectric fil Method of reducing carbon contamination of a thin dielectric fil

1999-06-08

2000-09-26

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 38, H01L 218238

Patent

active

06124158&

ABSTRACT:
A process is provided for the formation of a thin film of gate dielectric or similar material on a silicon semiconductor substrate from an organic precursor by atomic layer epitaxy, wherein the organic precursor is introduced to react with the treated surface to form a bonded monolayer of reactive species. A second reactant is introduced to react with the surface to form the desired dielectric. After each step in the cycle, the reaction chamber is purged with an inert gas to prevent reactions except on the surface. The cycle is repeated tens to hundreds of times to achieve a desired final film thickness. No less frequently than every third cycle, the film undergoes a discrete treatment step wherein ozone is introduced into the chamber to oxidize carbon contaminants therein to form volatile products which are removed from the reaction chamber by purging with the inert gas. In a preferred embodiment where the substrate is silicon or polysilicon, a sub-monolayer of a protection material is formed by boding to silicon sites on the surface before the deposition of dielectric is begun. A preferred dielectric is gate aluminum oxide that is deposited using trimethyl aluminum as a precursor.

REFERENCES:
patent: 5661092 (1997-08-01), Koberstein et al.
patent: 5851849 (1998-12-01), Comizzoli et al.
patent: 6030460 (2000-02-01), Sukharev
Tuomo, S., "Atomic Layer Epitaxy," Thin Solid Films, vol. 216, 1992, pp. 84-89.
Tuomo, S., "Cost-effective Processing by Atomic Layer Epitaxy," Thin Solid Films, vol. 225, 1993, pp. 96-98.
Utriainen, M. et al., "Studies of NiO Thin Film Formation by Atomic Layer Epitaxy,", Materials Science and Engineering, vol. B54, 1998, pp. 98-103.

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