Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-10-17
2006-10-17
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S148000, C365S173000
Reexamination Certificate
active
07123505
ABSTRACT:
Information is read from a magnetic tunnel junction (MTJ) of a magnetic memory. An electromagnetic field is applied to the MTJ that is sufficient to cause a change in the electrical resistance of the MTJ. The change in the electrical resistance of the MTJ is at least substantially removed responsive to removal of the applied electromagnetic field. The change in the electrical resistance of the MTJ that associated with the application of the electromagnetic field is measured. The information in the MTJ is determined based on the measured change in the electrical resistance of the MTJ. The MTJ can be determined to store a representation of a first binary value when the electrical resistance of the MTJ decreases, and to store a representation of a second binary value when the electrical resistance increases.
REFERENCES:
patent: 6567297 (2003-05-01), Baker
patent: 6909630 (2005-06-01), Tsang
patent: 6909633 (2005-06-01), Tsang
patent: 2005/0036362 (2005-02-01), Iwata et al.
patent: 2002-65669 (2002-10-01), None
patent: 102003011025 (2003-02-01), None
Notice to File a Response/Amendment to the Examination Report for Korean patent application No. 10-2003-39852 mailed on May 19, 2005.
Auduong Gene N.
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
LandOfFree
Method of reading information in a magnetic memory by a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of reading information in a magnetic memory by a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reading information in a magnetic memory by a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3652667