Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-01-29
2000-06-20
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438771, 438788, 438795, H01L 21336, H01L 21469, H01L 2126, H01L 21524
Patent
active
060777516
ABSTRACT:
A method for rapid thermal processing (RTP) of a silicon substrate, the substrate having a surface with a plurality of areas implanted with dopant ions, comprising a) contacting the surface with a reactive gas, b) processing the substrate for a first process time and temperature sufficient to produce a significant protective layer upon the surface, and c) annealing the substrate for a second process time and temperature sufficient to activate the dopant material so that the sheet resistivity of the implanted areas is less than 500 ohms/square, where the first and second processing time and temperature are insufficient to move the implanted dopant ions to a depth of more than 80 nanometers from the surface.
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Froeschle Barbara
Glowacki Frederique
Marcus Steven D.
Hodgson Rodney T
Lindsay Jr. Walter L.
Niebling John F.
Steag RTP Systems GmbH
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