Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-29
2009-02-03
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C257S738000, C257S779000, C257S780000
Reexamination Certificate
active
07485563
ABSTRACT:
A method of providing electrically conductive bumps on electrode pads of a microelectronic substrate, and bumped substrate formed according to the method. The method includes: providing a microelectronic substrate including electrode pads; providing a sorting mask defining first openings and second openings therethrough, the second openings being larger than the first openings; disposing the mask onto the substrate such that the first openings and second openings register with respective ones of the electrode pads; providing first solder portions onto corresponding ones of the electrode pads through the first openings, and second solder portions onto corresponding ones of the electrode pads through the second openings, the second solder portions being larger than the first solder portions; reflowing the solder portions to form, respectively first solder bumps and second solder bumps on respective ones of the electrode pads; and removing the mask after providing solder portions and before reflowing.
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Guzek John
Pang Mengzhi
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Nguyen Ha Tran T
Whalen Daniel
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