Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-29
2009-08-04
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C257SE21508, C257S738000, C257S779000
Reexamination Certificate
active
07569471
ABSTRACT:
A method of providing electrically conductive bumps on electrode pads of a microelectronic substrate, and bumped substrate formed according to the method. The method includes: providing a substrate including first electrode pads and second electrode pads thereon, the first electrode pads exhibiting a first pattern, and the second electrode pads exhibiting a second pattern different from the first pattern; attaching first solder portions to a solder delivery head according to the first pattern, and second solder portions to a solder delivery head according to the second pattern, the second solder portions being larger than the first solder portions; after attaching, releasing the first solder portions onto the first electrode pads, and the second solder portions onto the second electrode pads; after releasing, reflowing the first solder portions and second solder portions to form, respectively, first solder bumps and second solder bumps on the electrode pads.
REFERENCES:
patent: 5749614 (1998-05-01), Reid
patent: 5985694 (1999-11-01), Cho
patent: 6415974 (2002-07-01), Jao
patent: 2004/0127010 (2004-07-01), Chen et al.
patent: 2007/0069346 (2007-03-01), Lin et al.
Guzek John
Pang Mengzhi
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Nguyen Ha Tran T
Whalen Daniel
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