Method of programming a non-volatile memory device

Details Method of programming a non-volatile memory device Method of programming a non-volatile memory device

2011-03-22

2011-03-22

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189160, C365S203000, C365S206000, C365S202000

Reexamination Certificate

active

07911823

ABSTRACT:
A method of programming a non-volatile memory device with memory cells formed of variable resistance elements and disposed between word lines and bit lines, includes: previously charging a selected word line and a selected bit line together with a non-selected word line and a non-selected bit line up to a certain voltage; and further charging the selected word line and the non-selected bit line up to a program voltage higher than the certain voltage and a program-block voltage, respectively, and simultaneously discharging the selected bit line.

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