Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1993-04-01
1994-11-22
McCamish, Marion E.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430314, 430317, 156644, 1566591, 1566611, G03C 500
Patent
active
053668480
ABSTRACT:
A method is provided for making submicron contact openings by forming an insulating layer over a substrate and a photoresist layer over the insulating layer. The thick photoresist layer is patterned and etched to form a first opening in the photoresist. A thin photoresist layer is then formed over the integrated circuit which is then patterned and etched to form a second opening inside the first opening. A contact opening is then etched through the insulating layer through the second opening in the thin photoresist.
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patent: 4501547 (1986-05-01), Brownell
patent: 4694565 (1987-09-01), Custode
"Use of Ultra-Thin Layers of Spun on Resist to Product Sidewall Spacer and/or Enhance Sidewall Sloping" IBM Technical Disclosure Bulletin, vol. 31, No. 7, Dec. 1988.
Reichmanis, et al., "Approaches to Resists for Two-Level RIE Pattern Transfer Applications", Solid State Technology/Aug. 1985, pp. 130-135.
Ong, et al., "Multilayer Resists for Fine Line Optical Lithography", Solid State Technology/Jun. 1984, pp. 155-160.
Roland, R. et al., "The Mechanism of the Desired Process", Advances in Resist Technology and Processing IV, vol. 771, (SPIE, 1987), pp. 69-76.
Hata William Y.
Thane Nathan
Duda Kathleen
Hill Kenneth C.
Jorgenson Lisa K.
McCamish Marion E.
Robinson Richard K.
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