Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-24
2006-10-24
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S240000, C361S525000, C361S523000
Reexamination Certificate
active
07125764
ABSTRACT:
A manufacturing method according to the present invention of a solid electrolytic capacitor includes: a step of immersing a anode body on which the dielectrics film layer is formed in a solution that includes from 0.7 to 10% by weight of hydrogen peroxide, from 0.3 to 3% by weight of sulfuric acid and water as a main solvent, followed by, after pulling up, exposing to vapor of pyrrole or a pyrrole derivative, and thereby forming, on the dielectrics film layer, a first conductive polymer layer made of polypyrrole or a polypyrrole derivative; and a step of immersing the anode body on which the dielectrics film layer and the first conductive polymer layer are formed in a solution that includes a polymerizing monomer and a supporting electrolyte to electrolytically polymerize the polymerizing monomer, and thereby forming a second conductive polymer layer on the first conductive polymer layer.
REFERENCES:
patent: 4696835 (1987-09-01), Maus et al.
patent: 5017272 (1991-05-01), Kamigawa
patent: 6515848 (2003-02-01), Yoshida et al.
patent: 3-6217 (1991-01-01), None
Hasaba Yoshiaki
Ito Tadahito
Sakamaki Makoto
Taketani Yutaka
Lebentritt Michael
Lee Kyoung
Nixon & Vanderhye P.C.
Sun Electronic Industries Corp.
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