Method of producing MIS transistors having a gate electrode of m

Details Method of producing MIS transistors having a gate electrode of m Method of producing MIS transistors having a gate electrode of m

1995-10-18

1999-02-23

Everhart, Caridad

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438197, H01L 21223

Patent

active

058743529

ABSTRACT:
A method of producing an MIS transistor by preparing a substrate formed with a gate electrode and a semiconductor layer which defines a source region and a drain region, removing a natural oxide film from a surface of the gate electrode and from a surface of the semiconductor layer to expose an active surface, delivering a source gas containing an impurity component to the exposed active surface to deposit thereon an impurity adsorption film, and annealing the substrate to diffuse the impurity component from the impurity adsorption film into the gate electrode and concurrently into the semiconductor layer to form the source and drain regions. The gate electrode has the same conductivity type as the source and drain regions.

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