Method of producing insulator thin film, insulator thin...

Details Method of producing insulator thin film, insulator thin... Method of producing insulator thin film, insulator thin...

2007-03-13

2007-03-13

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C257SE29130, C257SE21435

Reexamination Certificate

active

10957948

ABSTRACT:
A method of producing an insulator thin film, for forming a thin film on a substrate by use of the atomic layer deposition process, includes a first step of forming a silicon atomic layer on the substrate and forming an oxygen atomic layer on the silicon atomic layer, and a second step of forming a metal atomic layer on the substrate and forming an oxygen atomic layer on the metal atomic layer, wherein the concentration of the metal atoms in the insulator thin film is controlled by controlling the number of times the first step and the second step are carried out.

REFERENCES:
patent: 6174809 (2001-01-01), Kang et al.
patent: 2002/0146916 (2002-10-01), Irino et al.
patent: 2004/0266045 (2004-12-01), Mears et al.
patent: 2005/0184286 (2005-08-01), Mears et al.
patent: 2001 223215 (2001-08-01), None

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